IEEE Photonics Technology Letters · 2006 · 27 citations · 12 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesSemiconductor HeterostructuresSemiconductor LasersSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsBarrier LayersBeam DivergenceCarrier ConfinementHeterostructure LasersHigh-power LasersOptical ConfinementOptical Confinement StructuresSemiconductor Laser Diodes
High-power double-barrier separate confinement heterostructure (SCH) GaAsP-AlGaAs-GaAs laser diodes designed for low vertical beam divergence emission at 800-nm band are presented. Insertion of thin wide-gap (low refractive index) barrier layers at the interfaces between the waveguide and cladding layers of an initial SCH causes an optical confinement weakening. As a result, the vertical divergences down to 16deg and 13deg have been obtained, depending on the design version. Similar threshold current densities, higher characteristic temperatures T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</sub> compared to the high-power large optical cavity (LOC) lasers of comparable beam divergences and promising high-power performance make this design an alternative to LOC solution
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High-power 808 nm lasers with a super-large optical cavity
A. Knauer, G. Erbert, R. Staske et al. · Semiconductor Science and Technology · 2005 · 76 citations