Millimeter-Wave Devices and Circuit Blocks up to 104 GHz in 90 nm CMOS

Abstract

A systematic methodology for layout optimization of active devices for millimeter-wave (mm-wave) application is proposed. A hybrid mm-wave modeling technique was developed to extend the validity of the device compact models up to 100 GHz. These methods resulted in the design of a customized 90 nm device layout which yields an extrapolated of 300 GHz from an intrinsic device . The device is incorporated into a low-power 60 GHz amplifier consuming 10.5 mW, providing 12.2 dB of gain, and an output of 4 dBm. An experimental three-stage 104 GHz tuned amplifier has a measured peak gain of 9.3 dB. Finally, a Colpitts oscillator operating at 104 GHz delivers up to 5 dBm of output power while consuming 6.5 mW.