IEEE Transactions on Electron Devices · 1992 · 21 citations · 5 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesCoherenceDevice CharacterizationDevice ReliabilityNoise In Electronic DevicesNoise In Semiconductor DevicesSemiconductor ReliabilityCoherence MeasurementCoherence ModelingDevice Noise CharacterizationGeneration-recombination NoiseNoise In Field-effect TransistorsNoise In High-frequency Semiconductor DevicesNoise In Metal-oxide-semiconductor Field-effect TransistorsNoise Spectral Analysis
The gate and drain current fluctuations and their coherence have been investigated on MESFETs from NEC and RTC and on MODFETs from NEC, Fujitsu, and Sony. In the frequency range of 10 Hz to 100 kHz the observed spectra show mainly 1/f and generation-recombination noise. Some devices show a complete absence of coherence in that frequency range. Other devices show a coherence as high as 0.55 at low frequencies and a drop at higher frequencies. Some devices show a very low coherence level which increased above a characteristic frequency. The proposed model explains the experimentally observed trends and their physical meaning. The coherence measurement can be used as an additional diagnostic tool for MESFET and MODFET reliability studies.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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1/f noise in MODFETs at low drain bias
Jean-Marie Peransin, Patrick Vignaud, D. Rigaud et al. · IEEE Transactions on Electron Devices · 1990 · 170 citations
Gate current 1/f noise in GaAs MESFET's
L.K.J. Vandamme, D. Rigaud, Jean-Marie Peransin et al. · IEEE Transactions on Electron Devices · 1988 · 24 citations