IEEE Transactions on Microwave Theory and Techniques · 1990 · 23 citations · 9 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesDevice ModelingIntegrated Circuit DesignMicrowave Integrated CircuitsNoise In Electronic DevicesNoise In Semiconductor DevicesNoise PredictionMicrowave Circuit ModelingMicrowave ModelingMillimeter-wave TransistorsNoise FigureNoise Parameter ExtractionNoise ParametersNoise SourcesSmall-signal Device Modeling
An electrical FET model, derived from a partition of the actual transistor along its gate width into N identical sections, is presented. This sliced model has two important advantages compared to distributed models: first, the derivation of its element values is obtained by directly applying Kirchhoff's laws, and second, inserting the noise sources is easy and makes possible the prediction of the FET noise parameters. An example that shows good agreement between minimum noise figures derived from the sliced model and from the Fukui formula in the range 18-40 GHz is given.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
9
Thermal Noise in Field-Effect Transistors
A. Der Ziel · Proceedings of the IRE · 1962 · 345 citations