Monolithic integration of 5 V CMOS and high-voltage devices

Alex Q. Huang, G.A.J. Amaratunga, J. Humphrey, E.M. Sankara Narayanan, W. I. Milne, Chelsea Starbuck

IEEE Electron Device Letters · 1992 · 13 citations · 8 references

Concepts

Abstract

A fully CMOS-compatible HVIC technology has been developed that features 5 V high-performance digital CMOS with high-voltage devices of more than 400 V. This technology uses only one or two masks in addition to standard p-well CMOS technology. Design optimization has been achieved to meet the needs of both CMOS and high-voltage devices. A large number of different devices are available in this technology, including bipolar transistors, lateral MOS gate power devices, and high-voltage p-channel power devices.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

References

8