IEEE Electron Device Letters · 1992 · 13 citations · 8 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesVlsi DesignCmos Circuit DesignIntegrated Circuit DesignMixed-signal IntegrationPower OptimizationCmos Digital Circuit DesignDevice OptimizationLateral Power DevicesMonolithic Architecture
A fully CMOS-compatible HVIC technology has been developed that features 5 V high-performance digital CMOS with high-voltage devices of more than 400 V. This technology uses only one or two masks in addition to standard p-well CMOS technology. Design optimization has been achieved to meet the needs of both CMOS and high-voltage devices. A large number of different devices are available in this technology, including bipolar transistors, lateral MOS gate power devices, and high-voltage p-channel power devices.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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High voltage thin layer devices (RESURF devices)
J.A. Appels, H.M.J. Vaes · 1979 · 520 citations
The insulated gate rectifier (IGR): A new power switching device
B. Jayant Baliga, M.S. Adler, P. Gray et al. · 1982 · 199 citations
Analysis of the lateral insulated gate transistor
M. Simpson, P.A. Gough, F. I. Hshieh et al. · 1985 · 44 citations