Publication | Closed Access
Improvement in the bias stability of amorphous InGaZnO TFTs using an Al 2 O 3 passivation layer
36
Citations
24
References
2012
Year
Materials ScienceAluminium NitrideEngineeringOxide ElectronicsApplied PhysicsAmorphous Ingazno TftsGallium OxideBias StabilityAl 2OptoelectronicsCompound Semiconductor
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