Tunneling microscopy of silicon and germanium: Si(111)7×7, SnGe(111)7×7, GeSi(111)5×5, Si(111)9×9, Ge(111)2×8, Ge(100)2×1, Si(110)5×1

Abstract

The tunneling microscope has been used to study the low-index faces of silicon and germanium. Si(111) 7×7 and 9×9, GeSi(111) 5×5, and SnGe(111) 7×7 are discussed in the light of the dimer–adatom–stacking fault structural model. Ge(111) 2×8 is compared to Si(111), Ge(100) is shown and compared to Si(100), and new structures on the Si(110) 5×1 surface are shown.