Japanese Journal of Applied Physics · 1981 · 23 citations · 24 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSemiconductor MaterialsSolid State PhysicsElectrical ConductivityElectronic Band StructureMagnetism In SolidsSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsConduction BandEffective MassMagnetoresistanceN-type Oxide SemiconductorsResonanceTemperature DependenceTemperature Dependence Of Electrical PropertiesValence Band
Magnetophonon measurements have been carried out in bulk n-InAs using magnetic field modulation technique to obtain the temperature dependence of the band edge effective mass. Resonance extrema for N =2, 3 and 4 were observed in the transverse magnetoresistance in the temperature range from 150 to 250 K and the effective masses were deduced taking into account the conduction band non-parabolicity and the polaron effect. The masses are 0.0231±0.005 m at 150 K and 0.0219±0.005 m at 250 K. The observed temperature dependence of the mass is discussed using Kane's formula for the nonparabolic conduction band and the momentum matrix element is determined to be P 2 =19–21 in units of eV.
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Band structure of indium antimonide
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