Series connection of high voltage IGBT modules

Abstract

In this paper experimental and simulation techniques are used to investigate the series connection of high voltage IGBT modules. An experimental setup with a power rating of 6.6 kV and 1200 A is established and used to analyze the circuit behavior in detail. An improved gate driver circuit in combination with an active overvoltage control enables safe operation of the circuit under all conditions. Additionally, the circuit is simulated with the simulation tool SABER using physics-based electro-thermal models for the description of the power semiconductor devices in the circuit. Experimental and simulated data agree very well.