A Highly Reliable Self-Aligned Graded Oxide WO<inf>x</inf> Resistance Memory: Conduction Mechanisms and Reliability

Abstract

WO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> formed by plasmas oxidation shows promising multi-bit/cell resistance memory characteristics (ChiaHua Ho et al., 2007). The simple memory is completely self-aligned, requiring no additional masks and has a small 6F <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> cell size. In this work we introduce a graded oxide device that is highly reliable (250degC baking for > 2,000 hrs). The conduction mechanism and factors affecting the memory reliability are examined extensively.