Publication | Closed Access
Automotive 130 nm smart-power-technology including embedded flash functionality
44
Citations
5
References
2011
Year
Unknown Venue
Low-power ElectronicsElectrical EngineeringEnergy HarvestingEngineeringVlsi DesignAutomotive 130Buried LayersHigh Voltage DevicesDeep TrenchesComputer EngineeringElectric DriverAutomotive ElectronicsPower ElectronicsElectronic PackagingMicroelectronicsBeyond CmosElectronic Circuit
In this paper a 130 nm BCD technology platform is presented. The process offers logic-devices, flash-devices and high voltage devices with rated voltages up to 60 V. There are HV analog devices with variable channel length and HV power devices with low on-resistances. To ensure the safe operation of the power devices, a superior robustness against high energetic pulses of different length and repetitions could be achieved. The isolation of the different voltage stages is ensured by deep trenches and highly doped buried layers.
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