A Robust SOI SRAM Architecture by using Advanced ABC technology for 32nm node and beyond LSTP devices

Abstract

This paper presents that advanced actively body-bias controlled (Advanced ABC) technology contributes to enhancing operation margins of SRAMs. Significant enhancement of static noise margin (SNM) is successfully realized by using a body bias of load transistors while suppressing threshold-voltage variations for the first time. It is demonstrated that the write and read margins of 65nm-node SOI SRAMs are improved by the advanced ABC technology. Furthermore, it is found that the SNM is enhanced by 27% for 32nm and 49% for 22nm node. It is summarized that this technology is one of countermeasures for emerging generations.