IEEE Transactions on Electron Devices · 2008 · 10 citations · 10 references
EngineeringElectrical EngineeringLow-power DesignMicroelectronicsSemiconductor DevicesCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyDevice SimulationIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsShort-channel EffectsChannel DopingChannel Doping EffectsCorner EffectsDevice OptimizationDoping ProfilesOptimal DesignPolysiliconSemiconductor Doping Profiles
Pragmatic design of triple-gate (TG) devices is presented by considering corner effects, short-channel effects, and channel-doping profiles. A novel TG MOSFET structure with a polysilicon gate process is proposed using asymmetrical polysilicon gates. CMOS-compatible 's for high-performance circuit applications can be achieved for both nFET and pFET. The superior subthreshold characteristics and device performance are analyzed and validated by 3-D numerical simulations. Comparisons of device characteristics with a midgap metal gate are presented.
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