IEEE Transactions on Microwave Theory and Techniques · 1976 · 16 citations · 5 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave Integrated CircuitsMicrowave Semiconductor DevicesMicrowave System DesignRadio-frequency Integrated CircuitsIsolator DesignIsolator SystemsMicrowave Isolator DesignMillimeter-wave Integrated CircuitsMonolithic Microwave Integrated CircuitsRadio-frequency Integrated Circuit DesignSiliconSilicon Microwave Integrated Circuits
Device and circuit design of silicon IMPATT sources in the 130-170-GHz range is discussed. A 170-GHz source has been developed with 16 mW at the isolator output having an AM double-side-band noise-to-signal ratio of -115 dB per 1 kHz beyond 70 kHz from carrier.
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