Conference Record of the 1988 IEEE Industry Applications Society Annual Meeting · 2003 · 17 citations · 0 references
EngineeringElectrical EngineeringMicroelectronicsPower ElectronicsSemiconductor DevicesBipolar Junction TransistorsCurrent-voltage CharacteristicsDevice CharacterizationDevice ReliabilityMetal-oxide-semiconductor Field-effect TransistorsWide Band Gap SemiconductorsBreakdown VoltageCarrier InjectionMinority Carrier InjectionPower MosfetsShort-circuit CurrentVoltageVoltage Drop Analysis
The IGBT (insulated-gate bipolar transistor) or COMFET (conductivity-modulated field-effect transistor) has the same low drive requirements as for MOSFETs and the same carrier injection as a bipolar transistor, giving a low voltage drop even at high breakdown voltage ratings. The authors study the short-circuit capability. The high-current level or active region is found for different IGBTs. The short-circuit endurance time is investigated. The measurements show clear differences between the IGBTs from different manufacturers. The gate voltage is shown to be an important parameter.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>