Simulation of insulator charging by a narrow electron beam

E. Vicario, Nicole Rosenberg, Raphaël Renoud

Surface and Interface Analysis · 1994 · 18 citations · 5 references

Concepts

Abstract

Abstract We are dealing with the problem of the charge distribution within an insulator (present application: SiO 2 ) which is bombarded by a narrow electron beam. The electron trajectories within the sample are simulated via a single diffusion Monte‐Carlo method. A mathematical model is proposed for the potential and the charge density. The development of an electric field, a potential and the broadening of the incident beam are taken into account. These two last distributions appear to have a prominent effect. It is shown that the charge distribution tends to a double layer; the shape and thickness of positive and negative distributions are given.

References

5