Photoluminescence of Ti Doped 6H-SiC Grown by Vapor Phase Epitaxy

Abstract

Sharp luminescence peaks near the bandgap have been observed in 6H-SiC epitaxial films doped with Ti. The intensity of the Ti-related peak increases with the increase of Ti concentration in the films. The peak energy of the zero-phonon line (2.864 eV) is independent of both excitation intensity and temperature. Above results reveal that the luminescence lines are attributed to exciton recombination bound to Ti atoms and its phonon replicas.