Nanoscale Research Letters · 2011 · 40 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsCompound SemiconductorsIii-v SemiconductorsPhotovoltaic DevicesPhotovoltaic MaterialsSolar Cell MaterialsSolar CellsEnergy Conversion EfficiencyHeterojunction Solar CellsMolecular Beam EpitaxyPhotovoltaic EfficiencySolar Cell Fabrication
We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as the window layer and GaInP as the back surface field layer, the photovoltaic conversion efficiency of 26% at one sun concentration and air mass 1.5 global (AM1.5G) is realized. The efficiency of 16.4% is also reached for GaInP solar cell. Our results demonstrate that the MBE-grown phosphide-contained III-V compound semiconductor solar cell can be quite comparable to the metal-organic-chemical-vapor-deposition-grown high-efficiency solar cell.
7
40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells
Richard R. King, D. C. Law, K. Edmondson et al. · Applied Physics Letters · 2007 · 1.2K citations · Full text