Study of Low-Energy Doping Processes Using Continuous Anodic Oxidation Technique/Differential Hall Effect Measurements

Abstract

Comparing with conventional spreading resistance profiling and differential Hall effect (DHE) methods, the continuous anodic oxidation technique/DHE (CAOT/DHE) technique may achieve more reasonable profiles of carrier concentration n <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">h</sub> (x), mobility mu <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">h</sub> (x), and resistivity rho(x) and more reasonable carrier dose and x <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">j</sub> in Si substrate. It has been successfully used to study ultralow energy doping techniques including B beam-line implant and B <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sub> plasma doping (PLAD). CAOT/DHE data support the fact that the devices fabricated by PLAD achieve improvement to those fabricated by beam-line implant because PLAD offered higher surface carrier concentration and carrier dose. CAOT/DHE data quantitatively verify the so-called solid solubility limit activation theory - the carrier profiles and secondary ion mass spectrometry (SIMS) B impurity profiles under B <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SS</sub> are very well consistent on both beam-line and PLAD implants. As a cheaper and standard metrology, the SIMS/ARXPS method with the solid solubility limit activation theory may be used to quantitatively or semiquantitatively study the doping and activation processes.