Temperature dependent spectral response measurements for III-V multi-junction solar cells

Abstract

Temperature coefficients for the integrated current of all three subcells in a production InGaP/InGaAs/Ge solar cell structure have been measured at temperatures ranging from 5/spl deg/C to 100/spl deg/C. The InGaP, InGaAs, and germanium temperature coefficients are 0.011, 0.009, and 0.044 mA/cm/sup 2///spl deg/C, respectively. This data can be used to design multi-junction solar cells for optimum performance at any specified operating temperature in this range. The predicted current mismatch for a similar triple junction operating at 100/spl deg/C but designed to be current matched at 28/spl deg/C is approximately 3%.