2003 · 40 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationIii-v SemiconductorsPhotovoltaic DevicesSemiconductor Device MaterialsSolar Cell MaterialsSolar CellsHeterojunction Solar CellsHigh-temperature Device OperationMulti-junction Solar CellsPhotovoltaic Performance AnalysisSolar Cell CharacterizationSolar Cell Device PhysicsSpectral Temperature CoefficientTemperature-dependent Electrical Measurements
Temperature coefficients for the integrated current of all three subcells in a production InGaP/InGaAs/Ge solar cell structure have been measured at temperatures ranging from 5/spl deg/C to 100/spl deg/C. The InGaP, InGaAs, and germanium temperature coefficients are 0.011, 0.009, and 0.044 mA/cm/sup 2///spl deg/C, respectively. This data can be used to design multi-junction solar cells for optimum performance at any specified operating temperature in this range. The predicted current mismatch for a similar triple junction operating at 100/spl deg/C but designed to be current matched at 28/spl deg/C is approximately 3%.
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The stretched lens ultralight concentrator array
Mark O’Neill, A.J. McDanal, Michael F. Piszczor et al. · 2002 · 23 citations