S.C. Lu

Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si self-assembled quantum dots

Wen‐Hao Chang, An-Tai Chou, W. Y. Chen et al. · Applied Physics Letters · 2003 · 58 citations

Engineering, Electrical Engineering, Materials Science +17

Fabrication of a germanium quantum-dot single-electron transistor with large Coulomb-blockade oscillations at room temperature

P. W. Li, W. M. Liao, David M.-T. Kuo et al. · Applied Physics Letters · 2004 · 56 citations

Engineering, Electrical Engineering, Materials Science +17

A high-performance SiGe-Si multiple-quantum-well heterojunction phototransistor

Zingway Pei, Chao‐Chiun Liang, L.S. Lai et al. · IEEE Electron Device Letters · 2003 · 39 citations

Engineering, Electrical Engineering, Materials Science +17

Bandwidth Enhancement in an Integratable SiGe Phototransistor by Removal of Excess Carriers

Zingway Pei, Jin‐Wei Shi, Yu-Min Hsu et al. · IEEE Electron Device Letters · 2004 · 35 citations

Engineering, Electrical Engineering, Materials Science +17

Formation of atomic-scale germanium quantum dots by selective oxidation of SiGe/Si-on-insulator

P. W. Li, W. M. Liao, S. W. Lin et al. · Applied Physics Letters · 2003 · 29 citations

Engineering, Materials Engineering, Materials Science +17