W. M. Liao

Fabrication of a germanium quantum-dot single-electron transistor with large Coulomb-blockade oscillations at room temperature

P. W. Li, W. M. Liao, David M.-T. Kuo et al. · Applied Physics Letters · 2004 · 56 citations

Categoryquantum Electronics, Engineering, Tunneling Currents +21

Formation of atomic-scale germanium quantum dots by selective oxidation of SiGe/Si-on-insulator

P. W. Li, W. M. Liao, S. W. Lin et al. · Applied Physics Letters · 2003 · 29 citations

Engineering, Thermal Oxidation, Optoelectronic Devices +19

Study of tunneling currents through germanium quantum-dot single-hole and -electron transistors

P. W. Li, David M.-T. Kuo, W. M. Liao et al. · Applied Physics Letters · 2006 · 16 citations

Ge Quantum-dot, Electrical Engineering, Coulomb Oscillation +11

Analysis of Si/SiGe channel pMOSFETs for deep-submicron scaling

P.W. Li, W. M. Liao · Solid-State Electronics · 2002 · 14 citations

Electrical Engineering, Engineering, Technology Scaling +5