Analysis of Si/SiGe channel pMOSFETs for deep-submicron scaling

Effective mass and mobility of holes in strained Si/sub 1-x/Ge/sub x/ layers on

Sang Kook Chun, K.L. Wang · IEEE Transactions on Electron Devices · 1992 · 128 citations

Natural Sciences, Materials Science, Physics +17

High-mobility modulation-doped SiGe-channel p-MOSFETs

S. Verdonckt-Vandebroek, E.F. Crabbé, B.S. Meyerson et al. · IEEE Electron Device Letters · 1991 · 121 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Drift hole mobility in strained and unstrained doped Si/sub 1-x/Ge/sub x/ alloys

T. Manku, J.M. McGregor, Arokia Nathan et al. · IEEE Transactions on Electron Devices · 1993 · 102 citations

Engineering, Materials Science, Physics +16

A study of deep-submicron MOSFET scaling based on experiment and simulation

Hang Hu, J.B. Jacobs, L.T. Su et al. · IEEE Transactions on Electron Devices · 1995 · 62 citations

Engineering, Electrical Engineering, Microelectronics +16

SiGe pMOSFET's with gate oxide fabricated by microwave electron cyclotron resonance plasma processing

P.W. Li, E.S. Yang, Yin Yang et al. · IEEE Electron Device Letters · 1994 · 51 citations

Engineering, Electrical Engineering, Physics +16