Precision measurements of the effect of implanted boron on silicon solid phase epitaxial regrowth

Substrate-orientation dependence of the epitaxial regrowth rate from Si-implanted amorphous Si

L. Csepregi, Eamonn Kennedy, J. W. Mayer et al. · Journal of Applied Physics · 1978 · 585 citations

Natural Sciences, Materials Engineering, Materials Science +17

Reordering of amorphous layers of Si implanted with 31P, 75As, and 11B ions

L. Csepregi, Eamonn Kennedy, T. J. Gallagher et al. · Journal of Applied Physics · 1977 · 443 citations

Engineering, Materials Engineering, Materials Science +17

Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantation

E. P. Donovan, F. Spaepen, David Turnbull et al. · Journal of Applied Physics · 1985 · 410 citations

Natural Sciences, Materials Engineering, Materials Science +17

Influence of 16O, 12C, 14N, and noble gases on the crystallization of amorphous Si layers

Eamonn Kennedy, L. Csepregi, J. W. Mayer et al. · Journal of Applied Physics · 1977 · 324 citations

Natural Sciences, Materials Engineering, Materials Science +17

Entropy of ionization and temperature variation of ionization levels of defects in semiconductors

J. A. Van Vechten, C. D. Thurmond · Physical review. B, Solid state · 1976 · 275 citations

Natural Sciences, Materials Science, Physics +17