A W-band InGaAs/InAlAs/InP HEMT Low-Noise Amplifier MMIC with 2.5dB noise figure and 19.4 dB gain at 94GHz

Abstract

A three-stage W-band InGaAs/InAlAs/InP HEMT Low-Noise Amplifier (LNA) has been fabricated with 0.1mum EBL gate and improved Ohmic contact. A noise figure of 2.5 dB with an associated gain of 19.4 dB is demonstrated at 94 GHz. To our knowledge, it is the best noise/gain performance in a W-band LNA ever reported. A noise figure of 2.7 dB and an associated gain of 14.6 dB is also demonstrated with a dc power of 3.6 mW, making it a viable alternative to the ABCS technology for low dc power LNA applications.