Strong excitonic recombination radiation from homoepitaxial diamond thin films at room temperature

Abstract

We have observed strong emission lines at 5.27 and 5.12 eV at room temperature in cathodoluminescence spectra from homoepitaxial diamond films grown by step-flow mode prepared with microwave plasma assisted chemical vapor deposition. The temperature dependence of integrated intensity of the emission lines indicates that they are attributed to free-exciton recombination radiation associated with a transverse optical phonon and its replica. These results have demonstrated the superior crystalline quality of the homoepitaxial diamond films grown by the step-flow mode.