Plasma Enhanced Chemical Vapor Deposition and Characterization of Fluorine Doped Silicon Dioxide Films

Abstract

Fluorine-doped silicon dioxide films were deposited using a dual frequency (DF) multi-station sequential deposition plasma enhanced chemical vapor deposition (PECVD) reactor. Fluorine-doped silicon dioxide films with various Si–F content were deposited using mixture of vaporized tetraethylorthosilicate (TEOS), O 2 and C 2 F 6 . The Si–F content, physical properties and gap filling capability of the F-doped films were characterized. The physical properties and gap filling capability were found to be dependent upon wafer temperature, pressure, gas phase reactant concentrations and rf power, but is predominantly dependent on Si–F content. Aspect ratios (AR) up to 1.64:1 with 0.5 µm spacing were filled with no observable seams and voids.