IEEE Transactions on Microwave Theory and Techniques · 1990 · 13 citations · 7 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignIntegrated Circuit DevicesIntegrated Circuit FabricationMicrowave Integrated CircuitsMicrowave Semiconductor DevicesAnalog-to-digital ConversionGaas Microwave Integrated CircuitsGaas Monolithic Microwave Integrated CircuitsMicrowave DevicesMicrowave Integrated Circuit DesignMicrowave TransistorsMonolithic Microwave Integrated CircuitsSemiconductor Materials For Microwave Devices
Design and test results are presented for several multiuse GaAs ICs for radar and electronic warfare (EW) applications. The chips described are a redundant switch, a broadband distributed amplifier, a broadband variable-gain amplifier, a 2.5-GHz sample and hold, a 1-GHz analog-to-digital converter, and an L-band buffered prescalar. These ICs, fabricated with the ITT 0.4- mu m-gate MESFET multifunction self-aligned gate (MSAG) process, demonstrate excellent performance.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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A low-power, high-speed 4-bit GaAs ADC and 5-bit DAC
John Naber, H.P. Singh, R.A. Sadler et al. · 2003 · 16 citations