IEEE Transactions on Electron Devices · 1988 · 39 citations · 3 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave AmplifiersMicrowave Integrated CircuitsMicrowave Semiconductor DevicesSemiconductor Device MaterialsConductanceDevice FabricationGaas Microwave Integrated CircuitsManufacturingMicrowave DevicesMicrowave Power TransistorsMicrowave TransistorsSemiconductor Materials For Microwave Devices
The authors fabricated GaAs power FETs and microwave ICs using a novel fully planar, refractory self-aligned gate process. This process uses methods to reduce the gate resistance and output conductance without sacrificing simplicity. Because it is compatible with the use of an optical stepper, the process is suitable for manufacturing use. The C-band RF performance is excellent; the very uniform and reproducible device parameters resulted in a first-iteration 2.5-W C-band power amplifier that met design specifications on the first lot of wafers processed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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