Applied Physics Express · 2012 · 16 citations · 3 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDislocation MechanicsElectron DiffractionEpitaxial GrowthSemiconductor DefectsSemiconductor SurfacesTransmission Electron MicroscopyAluminum NitrideConvergent Beam Electron DiffractionDislocation NetworksDislocation PhysicsDislocations In Epitaxial FilmsElectron Diffraction Pattern AnalysisTransmission Electron DiffractionTransmission Electron Microscopy Of Dislocations
We have developed a novel liquid-phase epitaxial (LPE) technique that uses Ga–Al flux to grow AlN layers on nitrided sapphire substrates. In this study, cross-sectional and plan-view images were taken using a transmission electron microscope. An edge dislocation was dominant in the LPE AlN layers; its density was approximately 5×109 cm-2. Convergent-beam electron diffraction analysis revealed that the LPE layer had Al polarity, even though the nitrided sapphire layer had N polarity. The oxygen potential in the injecting N2 gas played an important role in the polarity inversion in the LPE growth.
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Solution growth of AlN single crystal using Cu solvent under atmospheric pressure nitrogen
Ken‐ichiro Kamei, Yasuhiro Shirai, Tsutomu Tanaka et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2007 · 37 citations
Natural Sciences, Materials Engineering, Materials Science +16