CHANGES OF OPTICAL REFLECTIVITY (1.8 TO 2.2 eV) INDUCED BY 40 - keV ANTIMONY ION BOMBARDMENT OF SILICON

Abstract

We have measured the fractional change in the optical reflectivity of silicon in the 1.8–2.2 eV photon energy band as a function of 40-keV antimony ion dose (1011–1015 Sb/cm2 at various implant temperatures (− 160–405°C). Approximate agreement is found between the change of reflectivity and previous measurements of lattice disorder as determined by backscattering of 1-MeV He ions.