IEEE Journal of Solid-State Circuits · 2012 · 40 citations · 18 references
EngineeringElectrical EngineeringAgingMicroelectronicsSemiconductor DevicesDevice CharacterizationDevice ModelingDevice ReliabilityMaterial DegradationReliability ModelingSemiconductor ReliabilityAging CharacterizationAging Degradation AnalysisCmos ReliabilityDegradation KineticsDevice DegradationReliability DegradationReliability Degradation AnalysisReliability Degradation Mechanisms
In the framework of MOSFET reliability for RF/AMS applications, a deep investigation of RF parameters degradation is performed. An innovative flow, composed of DC and RF stresses with DC and RF aging characterization, is presented. Degradation kinetics of main parameters are physically explained and modeled using PSP compact model to predict the behavior of stressed devices.
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