Piezoresistive Properties of Polycrystalline Silicon Thin Film

Abstract

Intending to use semiconductor films for piezoresistive elements, polycrystalline silicon films are prepared by electron bombardment method on insulating substrates and electrical properties of the films are investigated. Gage factor of the film is in the vicinity of 25, temperature coefficient of resistance and gage factor is about 1.8×10 -4 /°C, 1.1×10 -3 , respectively, for the resistivity of an order of 10 -3 Ω cm. Much smaller coefficients are obtained by heat treament.