IEEE Transactions on Nuclear Science · 1980 · 23 citations · 2 references
EngineeringComputer EngineeringElectrical EngineeringFault ToleranceFault-tolerant ComputingMicroelectronicsDevice ReliabilityHardware Fault ToleranceSingle Event EffectsSingle Event Upset ModelingStatic Cmos CircuitsStatic Random-access MemoryStatic Random-access Memory Design
Several types of CMOS static random access memories (RAMs) have been tested in a cyclotron for susceptibility to single event upsets and latchup such as might occur in earth orbit or interplanetary space. No upsets have been observed for neutron fluences of 10 to the 11th n/sq cm and higher or proton fluences of 10 to the 9th protons/sq cm.
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Nuclear Reactions in Semiconductors
E.L. Petersen · IEEE Transactions on Nuclear Science · 1980 · 48 citations · Full text