Properties of Amorphous Si Prepared by RF Sputtering with a High Ar Pressure

Abstract

Amorphous Si films prepared under high Ar pressure are oxidized by exposure to air after preparation. In situ measurements show that the main reason for the low electrical conductivity of such films is not due to the oxidization. The film density is lower for the high Ar pressure film than for the low Ar pressure film, but the ESR center density is larger for the latter film. The former film is porous and has a low density of dangling bonds, while the latter film is more densely packed and has a higher density of dangling bonds.