Zn diffusion enhancement of interdiffusion in a GaInAsP-InP heterostructure

Abstract

The influence of concurrent Zn diffusion on the interdiffusion in a Gax In1−x Asy P1−y -InP heterostructure (x=0.28, y=0.61) was investigated using Auger electron spectroscopy and secondary-ion mass spectrometry. The measured profiles showed that the Zn diffusion (600 °C, 1–4 h) predominantly enhanced the cation (In-Ga) interdiffusion. The result could not be interpreted by the Zn-vacancy complex model. Under conditions of a group V overpressure, our results suggest that cation interstitials may control both the rate of Zn diffusion and the mixing of the group III sublattices in the InP-based alloy system.