Electron-beam effects in depth profiling measurements with Auger electron spectroscopy

Abstract

Ion-beam sputter etching and simultaneous Auger electron spectroscopy have been used to obtain elemental composition profiles on some electrically insulating samples. It has been noted that the effective sputter-etch rate is substantially larger on that part of the sample area which is irradiated by the incident electron beam than on the area which is subjected to ion bombardment only. This effect, which adversely influences the depth resolution of the method, is attributed to electron-stimulated desorption of the surface oxygen which in turn causes enhanced sputtering in the electron irradiated area.