Growth and morphology of 0.80eV photoemitting indium nitride nanowires

Abstract

InN nanowires with high efficiency photoluminescence emission at 0.80eV are reported. InN nanowires were synthesized via a vapor solid growth mechanism from high purity indium metal and ammonia. The products consist of only hexagonal wurtzite phase InN. Scanning electron microscopy showed wires with diameters of 50–100nm and having fairly smooth morphologies. High-resolution transmission electron microscopy revealed high quality, single crystal InN nanowires which grew in the ⟨0001⟩ direction.