Anomalous exchange interactions in III-V dilute magnetic semiconductors

Abstract

Based on local-density functional calculations, we study the exchange interactions between magnetic dopants Cr, Mn, and Fe in the III-V compounds GaAs, GaN, and AlN. We show the magnetic exchange interactions deviate strongly in behavior expected from simple models, and may explain the observed maximum in critical temperature with impurity concentration. Additionally the magnetism is responsible for a strong, short-range attraction between the magnetic dopants, thus creating an anomalous effective alloy hamiltonian. This suggests that the impurities may aggregate into small nanoclusters of a few magnetic atoms.