Post-annealing effects on the surface morphology and on the photoluminescence of molecular beam epitaxial ZnS on (100)GaAs

Molecular beam epitaxy

A.Y. Cho, John R. Arthur · Progress in Solid State Chemistry · 1975 · 1.2K citations

A New Field-Effect Transistor with Selectively Doped GaAs/n-Al_xGa_1-xAs Heterojunctions

Takashi Mimura, S. Hiyamizu, Toshio Fujii et al. · Japanese Journal of Applied Physics · 1980 · 780 citations · Full text

Engineering, Electrical Engineering, Materials Science +14

Two-dimensional electron gas at a semiconductor-semiconductor interface

H. L. Störmer, R. Dingle, A. C. Gossard et al. · Solid State Communications · 1979 · 448 citations

Engineering, Materials Science, Physics +14

Laser oscillation from quantum states in very thin GaAs−Al0.2Ga0.8As multilayer structures

J. P. van der Ziel, R. Dingle, Robert C. Miller et al. · Applied Physics Letters · 1975 · 213 citations

Natural Sciences, Materials Science, Physics +17

Molecular beam epitaxial growth of GaAs on Si(211)

Parvez N. Uppal, H. Kroemer · Journal of Applied Physics · 1985 · 139 citations

Natural Sciences, Materials Engineering, Materials Science +17