Applied Physics Letters · 2010 · 56 citations · 23 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsPhotovoltaic DevicesPhotovoltaic MaterialsSemiconductor InterfacesSemiconductor PhysicsSolar Cell MaterialsSolar CellsCarrier Transport In SemiconductorsCharge Transfer At Semiconductor InterfacesHeterojunction InterfacesHeterojunction Solar CellsInterfacial Charge TransferPhotoresponse CharacterizationSemiconductor HeterojunctionsSilicon Solar Cells
Two sets of silicon (Si) heterojunctions with either Au or PEDOT:PSS contacts have been prepared to compare interfacial majority carrier charge transfer processes at Si/metal and Si/polymer heterojunctions. Current-voltage (J-V) responses at a range of temperatures, wavelength-dependent internal quantum yields, and steady-state J-V responses under illumination for these devices are reported. The cumulative data suggest that the velocity of majority carrier charge transfer, vn, is several orders of magnitude smaller at n-Si/PEDOT:PSS contacts than at n-Si/Au junctions, resulting in superior photoresponse characteristics for these inorganic/organic heterojunctions.
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Depletion-Layer Photoeffects in Semiconductors
Wolfgang W. Gärtner · Physical Review · 1959 · 995 citations
Geoffrey Hutchison, Mark A. Ratner, Tobin J. Marks · Journal of the American Chemical Society · 2005 · 428 citations