Applied Physics Letters · 1984 · 93 citations · 6 references
EngineeringElectrical EngineeringPhysicsCondensed Matter PhysicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportDopingIii-v SemiconductorsSemiconductor HeterostructuresSemiconductor PhysicsWide Band Gap SemiconductorsCarrier HeatingCarrier Transport MechanismsElectron HeatingElectron MobilityHeterostructure DevicesModulation DopingTemperature DependenceTransport In Heterostructures
We have investigated electric field heating of high mobility electrons in modulation-doped GaAs-AlGaAs heterostructures by simultaneous measurement of luminescence and mobility. We find that hot electrons have a Fermi-Dirac distribution function for fields up to 750 V/cm and that the high field mobility of electrons can be understood in terms of field-induced electron heating and the temperature dependence of low field mobility.
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Electron mobilities in modulation-doped semiconductor heterojunction superlattices
R. Dingle, H. L. Störmer, A. C. Gossard et al. · Applied Physics Letters · 1978 · 1.5K citations