Electric field induced heating of high mobility electrons in modulation-doped GaAs-AlGaAs heterostructures

Abstract

We report the simultaneous determination of the temperature and mobility of electrons in modulation-doped multiple quantum well GaAs-AlGaAs heterostructures as a function of applied electric field up to 150 V/cm. The decrease of high field mobility with increasing electron temperature is found to be much more rapid than the decrease of the low field mobility with the lattice temperature.