Publication | Closed Access
ErAs epitaxial layers buried in GaAs: Magnetotransport and spin-disorder scattering
86
Citations
9
References
1989
Year
SemiconductorsSpintronicsMagnetismCusplike AnomalyEngineeringEpitaxial GrowthPhysicsEras Epitaxial LayersTopological HeterostructuresApplied PhysicsCondensed Matter PhysicsMagnetic ResonanceMultilayer HeterostructuresMolecular Beam EpitaxyDetailed Magnetotransport StudyCategoryiii-v SemiconductorMagnetoresistanceNovel Heterostructures
A detailed magnetotransport study of novel heterostructures comprised of epitaxial layers of semimetallic ErAs buried inside GaAs displays a cusplike anomaly in the magnetoresistance that is caused by spin-disorder scattering at the antiferromagnetic-paramagnetic phase boundary. The relatively low carrier concentration spares the Fermi surface from being cut by the broken symmetry and only spin disorder contributes to the anomaly.
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