Improving the Uniformity of Poly-Si Films Using a New Excimer Laser Annealing Method for Giant-Microelectronics

Abstract

Film uniformity is the main problem when applying laser-recrystallised poly-Si films to thin film transistors (TFTs) in giant micro electronics. However, this has been dramatically improved by a new excimer laser annealing method in which the solidification process of molten Si is controlled by low-temperature (≦400°C) substrate heating during excimer laser annealing. Poly-Si TFT fabricated around the laser irradiation overlap region exhibited a high field effect mobility uniformity of within ±8%.