Low-Temperature OMCVD of InN Thin Films from the Novel Air-Stable Single-Molecule Precursor Azido{bis[(3-dimethylamino)propyl]}indium, (N₃)In[(CH₂)₃NMe₂]₂

Abstract

Hexagonal InN and InGaN are interesting wide-bandgap semiconductors for optoelectronic applications. The first example of an air-stable, fairly volatile, and low melting precursor, (N3)In[(CH2)3NMe2]2 (1), to deposit crystalline InN at low temperatures (350−450 °C) is presented.