Photoluminescence as a tool for the study of the electronic surface properties of gallium arsenide

Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eV

M. D. Sturge · Physical Review · 1962 · 1.1K citations

Natural Sciences, Materials Science, Physics +17

Concentration dependence of the absorption coefficient for <i>n</i>− and <i>p</i>−type GaAs between 1.3 and 1.6 eV

H. C. Casey, D. D. Sell, K. W. Wecht · Journal of Applied Physics · 1975 · 618 citations

Engineering, Materials Engineering, Materials Science +17

Concentration-dependent absorption and spontaneous emission of heavily doped GaAs

H. C. Casey, Frank Stern · Journal of Applied Physics · 1976 · 559 citations

Engineering, Electrical Engineering, Materials Science +17

Variation of minority-carrier diffusion length with carrier concentration in GaAs liquid-phase epitaxial layers

H. C. Casey, B.I. Miller, E. Pinkas · Journal of Applied Physics · 1973 · 237 citations

Engineering, Electrical Engineering, Materials Science +17

Nonradiative Recombination at Deep Levels in GaAs and GaP by Lattice-Relaxation Multiphonon Emission

D. V. Lang, C. H. Henry · Physical Review Letters · 1975 · 232 citations

Engineering, Physics, Condensed Matter Physics +14