Applied Physics Letters · 1975 · 84 citations · 6 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsAmorphous SemiconductorsHigh-temperature OxidationSemiconductor Device MaterialsSemiconductor SurfacesSurface OxidationThin Film OxidationAmorphous Oxide SemiconductorsHydrochloric Acid TreatmentMaskingOxidation MechanismsSemiconductor OxidationSemiconductor Oxide Thin FilmsThermal Oxidation
Thermal oxidation of GaAs has been carried out at 500 °C in air. Uniform amorphous oxide films as thick as 3.4 μm were grown. This oxide, which adheres well to the substrate and can be etched off in hydrochloric acid, shows promise as a masking oxide for GaAs.
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M. Rubenstein · Journal of The Electrochemical Society · 1966 · 43 citations
Henry T. Minden · Journal of The Electrochemical Society · 1962 · 34 citations
Thermal oxidation of gallium arsenide
K. Navrátil · Czechoslovak Journal of Physics · 1968 · 34 citations