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Reduction of Threading Dislocations in GaN on Sapphire by Buffer Layer Annealing in Low-Pressure Metalorganic Chemical Vapor Deposition

Materials ScienceMaterials EngineeringWide-bandgap SemiconductorEngineeringSurface ScienceApplied PhysicsAluminum Gallium NitrideBuffer Layer AnnealingGan Power DeviceGallium OxideCategoryiii-v Semiconductor