O. Imafuji

Continuous Wave Operation of GaN Vertical Cavity Surface Emitting Lasers at Room Temperature

Toshikazu Onishi, O. Imafuji, Kentaro Nagamatsu et al. · IEEE Journal of Quantum Electronics · 2012 · 115 citations

Wide-bandgap Semiconductor, Short Wavelength Optic, Engineering +16

Optical-loss suppressed InGaN laser diodes using undoped thick waveguide structure

Masao Kawaguchi, O. Imafuji, Shinichiro Nozaki et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2016 · 56 citations

Ingan Lds, Photonics, Electrical Engineering +14

600 mW CW single-mode GaAlAs triple-quantum-well laser with a new index guided structure

O. Imafuji, T. Takayama, H. Suguira et al. · IEEE Journal of Quantum Electronics · 1993 · 45 citations

Engineering, Laser Science, Laser Applications +17

Structural investigation of sapphire surface after nitridation

Tadao Hashimoto, Yoshitami Terakoshi, Masahiro Ishida et al. · Journal of Crystal Growth · 1998 · 38 citations

Materials Science, Surface Characterization, Aluminium Nitride +6

Reduction of Threading Dislocations in GaN on Sapphire by Buffer Layer Annealing in Low-Pressure Metalorganic Chemical Vapor Deposition

Tadao Hashimoto Tadao Hashimoto, Masaaki Yuri, Masahiro Ishida et al. · Japanese Journal of Applied Physics · 1999 · 32 citations

Materials Science, Materials Engineering, Wide-bandgap Semiconductor +8